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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD665 DESCRIPTION With TO-3 package Complement to type 2SB645 High power dissipation APPLICATIONS Power amplifier applications Power switching applications DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Collector CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 5 15 4 TC=25ae 150 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Fig.1 simplified outline (TO-3) and symbol UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=10A; IB=1A IC=10A; IB=1A VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=5V 40 300 15 MIN 200 TYP. 2SD665 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V 2.0 2.5 0.1 0.1 140 V V mA mA pF MHz hFE Classifications O 40-80 R TOR NDU ICO E SEM ANG INCH 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD665 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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